Hitachi Energy and Pakal Technologies have announced a collaboration to integrate Pakal’s IGTO(t) silicon power switch into Hitachi Energy’s high-voltage power modules.
The companies said the partnership will begin with devices used in applications including rail, renewables, energy storage, AI and data centre infrastructure.
They added that the collaboration targets reduced energy losses and improved efficiency in high-voltage power conversion by combining Hitachi Energy’s module design expertise with Pakal’s IGTO(t) technology, which delivers 30% lower losses than widely used devices.
Niklas Persson, managing director of Hitachi Energy’s grid integration business unit, said: “With a century-long legacy of in-house semiconductor manufacturing expertise and ongoing expansion, Hitachi Energy is committed to advancing innovation in power electronics. We are pleased to join forces with Pakal Technologies to incorporate its novel IGTO(t) within our semiconductor portfolio.
“This collaboration represents, over time, an opportunity to strengthen the global energy ecosystem at its core.”
Ben Quinones, chief executive of Pakal Technologies, said: “Pakal Technologies was founded to make power conversion simpler, better, and more efficient. Collaborating with Hitachi Energy is an honor and secures a long-term partner capable of scaling impact with us.
“Having our IGTO(t) platform recognized by a company with Hitachi Energy’s exceptional history for quality, reliability, and performance in the energy landscape ensures we can contribute to today’s sprint toward the electrification era.”
The IGTO(t) is the first new high-voltage silicon power semiconductor since the insulated gate bipolar transistor was introduced in the 1980s and delivers lower conduction losses while remaining compatible with existing architectures.